Infineon CoolMOS P7 N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-220 IPP60R080P7XKSA1
- RS 제품 번호:
- 217-2558
- 제조사 부품 번호:
- IPP60R080P7XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 50 units)*
₩229,100.00
일시적 품절
- 2026년 10월 05일 부터 100 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩4,582.00 | ₩229,140.00 |
| 100 - 150 | ₩4,514.00 | ₩225,660.00 |
| 200 + | ₩4,414.00 | ₩220,680.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 217-2558
- 제조사 부품 번호:
- IPP60R080P7XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 129W | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.95mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Width | 4.57mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 129W | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Height 29.95mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Width 4.57mm | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 37A Maximum Continuous Drain Current - IPP60R080P7XKSA1
This MOSFET is a high-voltage, N-channel switching transistor designed for power applications requiring through-hole mounting and enhanced-channel operation. It is intended for circuits that need substantial continuous drain current and elevated voltage handling across a wide operating temperature range.
Features and Benefits:
• 600V drain capability enables high-voltage switching applications
• 37A continuous drain current supports high-power load handling
• 80mΩ Rds(on) reduces conduction losses for improved efficiency
• 129W maximum power dissipation allows sustained power handling
• 51nC typical gate charge supports predictable switching behaviour
• 20V gate rating tolerates robust gate-drive voltages
• 37A continuous drain current supports high-power load handling
• 80mΩ Rds(on) reduces conduction losses for improved efficiency
• 129W maximum power dissipation allows sustained power handling
• 51nC typical gate charge supports predictable switching behaviour
• 20V gate rating tolerates robust gate-drive voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for motor-drive stages requiring high current
• Used with through-hole PCBs in industrial control systems
• Can be used for switch-mode power conversion designs
• Suitable for needing wide temperature endurance
• Ideal for motor-drive stages requiring high current
• Used with through-hole PCBs in industrial control systems
• Can be used for switch-mode power conversion designs
• Suitable for needing wide temperature endurance
What thermal extremes can this device operate within?
It is rated to operate from -55°C up to 150°C.
What package and mounting method does it use?
The device is supplied in a TO-220 package for through-hole mounting.
What is the device channel type and operating mode?
It uses an N-type channel in enhancement mode for conventional high-side or low-side switching.
What is the device forward voltage and how does it affect circuits?
The forward voltage is 0.9V, which affects the conduction drop during forward conduction in circuit designs.
관련된 링크들
- Infineon CoolMOS P7 Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-220 IPP60R080P7XKSA1
- Infineon CoolMOS CE Type N-Channel MOSFET, 37 A, 500 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220
- Infineon CoolMOS CE Type N-Channel MOSFET, 37 A, 500 V Enhancement, 3-Pin TO-220 IPA60R080P7XKSA1
- Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1
- Infineon CoolMOS C7 Type N-Channel MOSFET, 37 A, 600 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS P7 Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-220
