Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1

RS 제품 번호:: 215-2539
제조사 부품 번호:: IPP60R099P7XKSA1
제조업체:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩31,790.80

재고있음

435 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 10	₩6,358.16	₩31,790.80
15 - 20	₩6,200.24	₩31,001.20
25 +	₩6,102.48	₩30,512.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2539
제조사 부품 번호:: IPP60R099P7XKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS P7
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	45nC
	Maximum Power Dissipation Pd	117W
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Height	4.57mm
	Length	10.36mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS P7
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 45nC
	Maximum Power Dissipation Pd 117W
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Height 4.57mm
	Length 10.36mm
	Standards/Approvals No
	Automotive Standard No

Infineon CoolMOS™ P7 Series MOSFET, 31A Continuous Drain Current, 600V Drain Source Voltage - IPP60R099P7XKSA1

This MOSFET is a high-performance power component designed specifically for high-voltage applications. With a maximum continuous drain current of 31A and a maximum drain-source voltage of 600V, it is housed in a TO-220 package, making it suitable for through-hole mounting. Its exceptional specifications make it ideal for advanced electronic designs across various industries.

Features & Benefits

• Suitable for both hard and soft switching use

• Significantly reduces switching and conduction losses

• Excellent robust body diode for hard commutation

• High ESD protection exceeding 2kV for reliable performance

• Enhancement mode configuration simplifies circuit design

Applications

• Ideal for PFC (Power Factor Correction) stages

• Used in hard-switching PWM (Pulse Width Modulation)

• Applicable in resonant switching stages for various electronics

• Suitable for adapters and LCD/PDP TVs

• Utilised in lighting solutions, server equipment, and telecom systems

What is the significance of the low RDS(on) value in this device?

A low RDS(on) value of 0.099 ohm minimises conduction losses, enhancing the efficiency of power conversion in applications where heat generation is a concern.

How does its working temperature range impact its performance?

Operating effectively between -55°C and +150°C, it ensures reliability and stability even in extreme conditions, making it suitable for diverse environments.

Can it be used in parallel configurations?

Yes, for parallel configurations, the use of ferrite beads on the gate or separate totem poles is generally recommended to prevent oscillation and ensure stable operation.