Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1

RS 제품 번호:: 130-0924
제조사 부품 번호:: IPP60R099P6XKSA1
제조업체:: Infineon

Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

Subtotal (1 unit)*

₩7,162.80

재고있음

455 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 +	₩7,162.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 130-0924
제조사 부품 번호:: IPP60R099P6XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	37.9A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS P6
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	70nC
	Maximum Power Dissipation Pd	278W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Width	4.57 mm
	Length	10.36mm
	Standards/Approvals	No
	Height	15.95mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 37.9A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS P6
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 70nC
	Maximum Power Dissipation Pd 278W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Width 4.57 mm
	Length 10.36mm
	Standards/Approvals No
	Height 15.95mm
	Automotive Standard No

Infineon CoolMOS™ P6 Series MOSFET, 37.9A Maximum Continuous Drain Current, 278W Maximum Power Dissipation - IPP60R099P6XKSA1

This MOSFET is tailored for high-performance applications in need of efficient power management. With a maximum continuous drain current of 37.9A and a drain-source voltage rating of 650V, it excels in automation and electronic sectors. Its enhancement mode N-channel configuration allows for effective switching capabilities, making it a preferred option for professionals in the electrical and mechanical industries.

Features & Benefits

• Low RDS(on) of 99mΩ improves switching efficiency

• Can dissipate up to 278W for enhanced durability

• Functions well under high temperatures of up to +150°C

• ESD protection above 2kV ensures dependable operation

• Suitable for both hard and soft switching applications

• Packaged in TO-220 for flexible mounting options

Applications

• Used in PFC stages for efficient power conversion

• Applicable in hard-switching PWM stages to boost performance

• Ideal for resonant switching stages in various electronic products

• Utilised in adapters and power supplies for electronic devices

• Effective in industrial automation systems demanding high power

What is the suitable gate-source voltage range for operation?

The appropriate gate-source voltage range for operation is -30V to +30V, ensuring safe and effective switching.

How does the low RDS(on) Value benefit power efficiency?

The low resistance enhances power efficiency by reducing conduction losses, leading to decreased heat generation during operation.

What is the maximum power dissipation capability during usage?

The maximum power dissipation capacity during operation is 278W, allowing robust performance under challenging conditions.

Is there any special consideration for using this component in parallel configurations?

When using in parallel, it is advisable to use ferrite beads on the gate or separate totem poles to optimise performance and minimise oscillations.

What thermal management practices should be implemented?

Effective thermal management practices include proper heat sinking and monitoring temperature during operation to maintain performance within specified limits.