제조사부품번호

Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1

RS 제품 번호:: 217-2548
제조사 부품 번호:: IPN70R450P7SATMA1
제조업체:: Infineon

Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩15,040.00

재고있음

추가로 2025년 12월 29일 부터 720 개 단위 배송

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수량	한팩당	한팩당*
20 - 740	₩752.00	₩15,040.00
760 - 1480	₩733.20	₩14,664.00
1500 +	₩721.92	₩14,438.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2548
제조사 부품 번호:: IPN70R450P7SATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	700V
	Package Type	SOT-223
	Series	IPN
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	6.2W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	13.1nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Length	6.7mm
	Standards/Approvals	No
	Width	3.7 mm
	Height	1.8mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 700V
	Package Type SOT-223
	Series IPN
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 6.2W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 13.1nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Length 6.7mm
	Standards/Approvals No
	Width 3.7 mm
	Height 1.8mm
	Automotive Standard No

Datasheet - IPN70R450P7SATMA1

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Extremely low losses due to very low FOMR DS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses(Eoss)

Product validation acc. JEDEC Standard

Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1

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