Infineon CoolMOS N-Channel MOSFET, 9.4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K2P7SATMA1
- RS 제품 번호:
- 222-4687
- 제조사 부품 번호:
- IPN70R1K2P7SATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (25 units, in packs of 25)*
₩32,550.00
일시적 품절
- 2026년 10월 05일 부터 4,500 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 25 | ₩1,302.00 | ₩32,540.00 |
| 50 - 75 | ₩1,276.00 | ₩31,920.00 |
| 100 - 225 | ₩1,256.00 | ₩31,420.00 |
| 250 - 475 | ₩1,232.00 | ₩30,800.00 |
| 500 + | ₩1,210.00 | ₩30,260.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4687
- 제조사 부품 번호:
- IPN70R1K2P7SATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | SOT-223 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 6.3W | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type SOT-223 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 6.3W | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
관련된 링크들
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R900P7SATMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R360P7SATMA1
- Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1
- Infineon IPN Type N-Channel MOSFET, 6.5 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R750P7SATMA1
- Infineon IPN Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K4P7SATMA1
- Infineon IPN70R Type N-Channel MOSFET, 3 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R2K0P7SATMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin SOT-223
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin SOT-223