Infineon IPN70R N-Channel MOSFET, 3 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R2K0P7SATMA1

RS 제품 번호:: 222-4921
제조사 부품 번호:: IPN70R2K0P7SATMA1
제조업체:: Infineon

Infineon IPN70R N-Channel MOSFET, 3 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R2K0P7SATMA1

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Subtotal (3000 units, on reels of 3000)*

₩1,032,000.00

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2027년 1월 26일 부터 배송

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RS 제품 번호:: 222-4921
제조사 부품 번호:: IPN70R2K0P7SATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	700V
	Package Type	SOT-223
	Series	IPN70R
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.8nC
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	6W
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	16V
	Maximum Operating Temperature	150°C
	Width	3.7mm
	Standards/Approvals	No
	Length	6.7mm
	Height	1.8mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 700V
	Package Type SOT-223
	Series IPN70R
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.8nC
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 6W
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 16V
	Maximum Operating Temperature 150°C
	Width 3.7mm
	Standards/Approvals No
	Length 6.7mm
	Height 1.8mm
	Automotive Standard No

Datasheet - IPN70R2K0P7SATMA1

Infineon IPN70R Series MOSFET, 700V Maximum Drain Source Voltage, 3A Maximum Continuous Drain Current - IPN70R2K0P7SATMA1

This MOSFET is a high-voltage, N-channel enhancement device designed for surface-mounted power switching in circuits requiring elevated drain-source voltages. It operates across a wide temperature range and is intended for applications where controlled gate drive and power dissipation management are important.

Features and Benefits:

• 700 V drain-source rating enables high-voltage switching capability
• 3 A continuous drain current supports moderate current loads
• 2 Ω maximum RDS(on) reduces conduction losses under light loads
• 3.8 nC typical gate charge minimises switching energy
• 16 V maximum gate-source limit allows standard gate-drive levels
• 6 W maximum power dissipation aids thermal management in SOT-223

Applications

• Suitable for power supplies requiring high-voltage switches
• Ideal for switch-mode regulators with moderate current demands
• Used for line-side switching in industrial control equipment
• Can be used for lighting drivers operating at high voltage
• Used with surface-mount assemblies where Compact power is needed

What ambient temperatures can it tolerate during operation?

It is specified to function down to −40 °C and up to 150 °C.

How does the package affect mounting and the thermal path?

The SOT-223 package is intended for surface mounting and provides a thermal path suitable for its 6 W dissipation rating.

What gate-drive considerations are required for safe operation?

Gate voltage must not exceed 16 V and should be controlled to achieve the desired enhancement conduction while respecting the gate charge of 3.8 nC.

How should designers account for conduction losses at rated current?

Use the maximum 2 Ω drain-source resistance to estimate worst-case conduction losses at continuous currents up to 3 A.