Infineon IPN N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K4P7SATMA1

RS 제품 번호:: 217-2544
제조사 부품 번호:: IPN70R1K4P7SATMA1
제조업체:: Infineon

Infineon IPN N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K4P7SATMA1

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Subtotal (3000 units, on reels of 3000)*

₩1,116,000.00

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RS 제품 번호:: 217-2544
제조사 부품 번호:: IPN70R1K4P7SATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	700V
	Package Type	SOT-223
	Series	IPN
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	4.7nC
	Maximum Power Dissipation Pd	6.2W
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.7mm
	Width	3.7mm
	Height	1.8mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 700V
	Package Type SOT-223
	Series IPN
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 4.7nC
	Maximum Power Dissipation Pd 6.2W
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.7mm
	Width 3.7mm
	Height 1.8mm
	Automotive Standard No

Datasheet - IPN70R1K4P7SATMA1

Infineon IPN Series MOSFET, 700V Maximum Drain Source Voltage, 4A Maximum Continuous Drain Current - IPN70R1K4P7SATMA1

This MOSFET is a high-voltage N-channel switching device designed for surface-mount applications in industrial thermal environments. It is intended to control power in circuits that require an enhancement‑mode transistor capable of handling elevated drain‑to‑source voltages and continuous current while operating across a wide temperature range.

Features and Benefits:

• 700V drain‑to‑source rating enables high-voltage switching
• 4A continuous drain current supports moderate load currents
• 1.4Ω Rds(on) reduces conduction losses under load
• 6.2W power dissipation allows sustained thermal load handling
• 30V gate tolerance provides robust gate-drive margin
• 4.7nC typical gate charge minimises switching energy

Applications

• Suitable for high-voltage switch circuits in power supplies
• Ideal for mid-power motor-drive stages with surface mounting
• Used for flyback and boost converter switching elements
• Can be used for controlled load switching in industrial equipment
• Suitable for circuits requiring wide temperature-range operation

What temperature extremes can it withstand in operation?

It operates reliably from -40°C up to 150°C.

How many connection pins are available for layout considerations?

The device is supplied with three electrical terminals for PCB mounting.

What package type should be specified for surface assembly?

It uses a SOT-223 package suitable for surface‑mount soldering processes.

What is the typical forward drop if the integral diode conducts?

The device exhibits a forward voltage of 0.9V when the intrinsic diode is conducting.

How does the gate charge affect switching performance?

A typical gate charge of 4.7nC limits gate-drive energy and influences switching speed and losses.