Infineon IPD N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1

RS 제품 번호:: 217-2522
제조사 부품 번호:: IPD60R360P7SAUMA1
제조업체:: Infineon

Infineon IPD N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1

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Subtotal (2500 units, on reels of 2500)*

₩1,610,000.00

추가로 2026년 10월 05일 부터 2,500 개 단위 배송

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수량	한팩당	릴당*
2500 - 10000	₩644.00	₩1,611,000.00
12500 +	₩632.00	₩1,578,500.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2522
제조사 부품 번호:: IPD60R360P7SAUMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.4nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	41W
	Forward Voltage Vf	900mV
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Width	6.22mm
	Standards/Approvals	No
	Height	2.41mm
	Length	6.73mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.4nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 41W
	Forward Voltage Vf 900mV
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Width 6.22mm
	Standards/Approvals No
	Height 2.41mm
	Length 6.73mm
	Automotive Standard No

Datasheet - IPD60R360P7SAUMA1

Infineon IPD Series MOSFET, 600V Drain Source Voltage, 41W Maximum Power Dissipation - IPD60R360P7SAUMA1

This MOSFET is a high-voltage N‑channel enhancement device designed for switching and power-control applications where elevated drain‑source voltage and moderate current capability are required. It operates across a wide temperature range and is supplied in a surface-mount package suitable for Compact power assemblies.

Features and Benefits:

• 600V drain‑source rating enabling high-voltage switching
• 9A continuous drain current supporting moderate load currents
• 360mΩ Rds(on) minimises conduction losses during operation
• 9.4nC gate charge for reduced switching drive requirements
• 41W power dissipation allowing substantial thermal loading
• 20V gate‑source limit permitting wide gate‑drive ranges

Applications

• Suitable for high-voltage power converters and inverters
• Used for switch elements in motor-drive stages
• Ideal for industrial power-supply switching duties
• Can be used for half-bridge and clamp circuits
• Used with discrete power assemblies in Compact SMD designs

What thermal range can this device withstand?

It is specified to operate from −40°C up to 150°C to accommodate harsh thermal environments.

What package type and mounting style are provided?

The device is supplied in a TO‑252 package configured for surface mounting to suit PCB power layouts.

How does the forward voltage affect conduction behaviour?

The forward voltage is 0.9V, which influences low-side conduction drop during forward current flow.

What gate drive limitations must be observed?

Gate‑source voltage must not exceed 20V to prevent gate oxide stress.

How many external connections does it present?

The component has three pins for gate, drain and source connections.