제조사부품번호

Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 217-2522
제조사 부품 번호:: IPD60R360P7SAUMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩1,306,600.00

재고있음

2,500 개 단위 배송 준비 완료

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수량	한팩당	릴당*
2500 - 10000	₩522.64	₩1,308,480.00
12500 +	₩513.24	₩1,282,160.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2522
제조사 부품 번호:: IPD60R360P7SAUMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.4nC
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	41W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Height	2.41mm
	Standards/Approvals	No
	Width	6.22 mm
	Length	6.73mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.4nC
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 41W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Height 2.41mm
	Standards/Approvals No
	Width 6.22 mm
	Length 6.73mm
	Automotive Standard No

Datasheet - IPD60R360P7SAUMA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss and R DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252

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