Infineon IPD Type N-Channel MOSFET, 31 A, 650 V Enhancement TO-252 IPD60R280PFD7SAUMA1

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Subtotal (1 pack of 2 units)*

₩4,812.80

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한팩당
한팩당*
2 - 8₩2,406.40₩4,812.80
10 - 98₩2,284.20₩4,568.40
100 - 248₩2,152.60₩4,305.20
250 - 498₩2,002.20₩4,004.40
500 +₩1,842.40₩3,684.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
258-3854
제조사 부품 번호:
IPD60R280PFD7SAUMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO 252 DPAK package features RDS(on) of 280mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and industry-leading SMD package reduce PCB space and in turn the bill-of-material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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