Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF

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포장 옵션
RS 제품 번호:
215-2583
Distrelec 제품 번호:
304-39-415
제조사 부품 번호:
IRF7311TRPBF
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.6A

Maximum Drain Source Voltage Vds

20V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

18nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

0.72V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Length

5mm

Height

1.5mm

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.

Generation V technology

Ultra low on resistance

Surface mount

Fully avalanche rated

Dual N-channel MOSFET

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