Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF
- RS 제품 번호:
- 215-2583
- 제조사 부품 번호:
- IRF7311TRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 20 units)*
₩24,064.00
일시적 품절
- 2027년 1월 01일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 20 - 980 | ₩1,203.20 | ₩24,075.28 |
| 1000 - 1980 | ₩1,173.12 | ₩23,473.68 |
| 2000 + | ₩1,156.20 | ₩23,112.72 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-2583
- 제조사 부품 번호:
- IRF7311TRPBF
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 0.72V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 1 | |
| Distrelec Product Id | 304-39-415 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 0.72V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.5mm | ||
Number of Elements per Chip 1 | ||
Distrelec Product Id 304-39-415 | ||
Automotive Standard No | ||
The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.
Generation V technology
Ultra low on resistance
Surface mount
Fully avalanche rated
Dual N-channel MOSFET
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