제조사부품번호

Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8

RS 제품 번호:: 215-2582
제조사 부품 번호:: IRF7311TRPBF
제조업체:: Infineon

Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

₩3,549,440.00

일시적 품절

2027년 1월 04일 부터 배송

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수량	한팩당	릴당*
4000 - 16000	₩887.36	₩3,547,184.00
20000 +	₩868.56	₩3,476,496.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2582
제조사 부품 번호:: IRF7311TRPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6.6A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	29mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	18nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	12 V
	Forward Voltage Vf	0.72V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Length	5mm
	Width	4 mm
	Height	1.5mm
	Standards/Approvals	No
	Number of Elements per Chip	1
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6.6A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 29mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 18nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 12 V
	Forward Voltage Vf 0.72V
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Length 5mm
	Width 4 mm
	Height 1.5mm
	Standards/Approvals No
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet - IRF7311TRPBF

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.

Generation V technology

Ultra low on resistance

Surface mount

Fully avalanche rated

Dual N-channel MOSFET

Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8

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