Infineon CoolMOS P7 Type N-Channel MOSFET, 44 A, 600 V Enhancement, 8-Pin HSOF IPT60R050G7XTMA1
- RS 제품 번호:
- 215-2556
- 제조사 부품 번호:
- IPT60R050G7XTMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩25,361.20
재고있음
- 486 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 498 | ₩12,680.60 | ₩25,361.20 |
| 500 - 998 | ₩12,361.00 | ₩24,722.00 |
| 1000 + | ₩12,173.00 | ₩24,346.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-2556
- 제조사 부품 번호:
- IPT60R050G7XTMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HSOF | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HSOF | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Cool MOS™ C7 Gold super junction MOSFET series (G7) brings together the benefits of the improved 600V Cool MOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.
Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
Enables best-in-class R DS(on) in smallest footprint
관련된 링크들
- Infineon CoolMOS P7 Type N-Channel MOSFET, 44 A, 600 V Enhancement, 8-Pin HSOF
- Infineon 600V CoolMOS G7 SJ Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin HSOF IPT60R102G7XTMA1
- Infineon IPT Type N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin HSOF-8 IPT60R055CFD7XTMA1
- Infineon IPT Type N-Channel MOSFET, 13 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T040S7XTMA1
- Infineon IPT Type N-Channel MOSFET, 8 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- Infineon IPT Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1
- Infineon IPT60R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 8-Pin HSOF IPT60R080G7XTMA1
- Infineon IPT60R Type N-Channel MOSFET, 75 A, 600 V Enhancement, 8-Pin HSOF IPT60R028G7XTMA1
