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Infineon CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-220 IPP80R450P7XKSA1

RS 제품 번호:: 215-2550
제조사 부품 번호:: IPP80R450P7XKSA1
제조업체:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-220 IPP80R450P7XKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩21,150.00

재고있음

추가로 2025년 12월 29일 부터 470 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 10	₩2,115.00	₩21,150.00
20 - 20	₩2,060.48	₩20,604.80
30 +	₩2,030.40	₩20,304.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2550
제조사 부품 번호:: IPP80R450P7XKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	800V
	Series	CoolMOS P7
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Power Dissipation Pd	73W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 800V
	Series CoolMOS P7
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Power Dissipation Pd 73W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPP80R450P7XKSA1

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

Infineon CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-220 IPP80R450P7XKSA1

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