제조사부품번호

Infineon CoolMOS Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220 IPP80R360P7XKSA1

RS 제품 번호:: 219-6011
제조사 부품 번호:: IPP80R360P7XKSA1
제조업체:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220 IPP80R360P7XKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩15,716.80

재고있음

640 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 5	₩3,143.36	₩15,716.80
10 - 95	₩3,086.96	₩15,434.80
100 - 245	₩3,030.56	₩15,152.80
250 - 495	₩2,977.92	₩14,889.60
500 +	₩2,921.52	₩14,607.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 219-6011
제조사 부품 번호:: IPP80R360P7XKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Series	CoolMOS
	Package Type	TO-220
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	84W
	Typical Gate Charge Qg @ Vgs	30nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Height	4.57mm
	Length	10.36mm
	Standards/Approvals	No
	Width	15.95 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Series CoolMOS
	Package Type TO-220
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 84W
	Typical Gate Charge Qg @ Vgs 30nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Height 4.57mm
	Length 10.36mm
	Standards/Approvals No
	Width 15.95 mm
	Automotive Standard No

Datasheet - IPP80R360P7XKSA1

The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Easy to drive and to design-in

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Easy to select right parts for fine tuning of designs

Infineon CoolMOS Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220 IPP80R360P7XKSA1

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