Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

₩192,900.00

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Per Tube*
50 - 50₩3,858.00₩192,860.00
100 - 150₩3,774.00₩188,660.00
200 +₩3,690.00₩184,460.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
215-2538
제조사 부품 번호:
IPP60R099P7XKSA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

117W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

45nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

10.36mm

Standards/Approvals

No

Height

4.57mm

Automotive Standard

No

Infineon CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 31A Maximum Continuous Drain Current - IPP60R099P7XKSA1


This MOSFET is a high-voltage N-channel transistor designed for power-switching roles in through-hole assemblies. It operates over a wide temperature range and is intended for applications requiring substantial voltage handling and continuous current capability while mounted in a TO-220 package.

Features and Benefits:


• 600V drain-source rating enabling high-voltage switching
• 31A continuous drain current for sustained power delivery
• 99 mΩ low RDS(on) reducing conduction losses
• 117W power dissipation for heavy-load thermal handling
• 45 nC typical gate charge Qg enabling reasonable switching speed
• 20V gate-source limit supporting common drive voltages

Applications


• Suitable for mains-side power conversion stages
• Ideal for switched-mode power supplies requiring 600V capability
• Used with heatsinked through-hole mounts in industrial units
• Can be used for high-voltage motor drive front-ends
• Suitable for power transistor roles in telecoms rectifiers

What thermal extremes can it tolerate during operation?


It is rated to function from -55 °C up to 150 °C, allowing use in environments with wide temperature variation.

How many electrical connections does the package provide?


The device is supplied with three pins configured for the typical MOSFET gate, drain and source connections in a through-hole layout.

What mounting method does it require for circuit assembly?


The component is supplied in a TO-220 format intended for through-hole mounting and attachment to an external heatsink as needed.

What gate-drive considerations should be observed?


The maximum permissible gate-source voltage is 20V, so gate drivers should limit amplitude within that threshold to prevent device stress.

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