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Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-252 IPD80R2K0P7ATMA1

RS 제품 번호:: 215-2514
제조사 부품 번호:: IPD80R2K0P7ATMA1
제조업체:: Infineon

Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-252 IPD80R2K0P7ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩23,913.60

재고있음

2,480 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
20 - 620	₩1,195.68	₩23,894.80
640 - 1240	₩1,165.60	₩23,293.20
1260 +	₩1,146.80	₩22,936.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2514
제조사 부품 번호:: IPD80R2K0P7ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	800V
	Series	800V CoolMOS P7
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	9nC
	Maximum Power Dissipation Pd	24W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 800V
	Series 800V CoolMOS P7
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 9nC
	Maximum Power Dissipation Pd 24W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD80R2K0P7ATMA1

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-252 IPD80R2K0P7ATMA1

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