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Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 215-2508
제조사 부품 번호:: IPD70R600P7SAUMA1
제조업체:: Infineon

Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

₩1,430,000.00

2,500 개 단위 배송 준비 완료

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수량	한팩당	릴당*
2500 - 10000	₩572.00	₩1,430,000.00
12500 +	₩560.00	₩1,401,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2508
제조사 부품 번호:: IPD70R600P7SAUMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8.5A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-252
	Series	700V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	10.5W
	Typical Gate Charge Qg @ Vgs	10.5nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8.5A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-252
	Series 700V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 10.5W
	Typical Gate Charge Qg @ Vgs 10.5nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD70R600P7SAUMA1

Infineon 700V CoolMOS P7 Series MOSFET, 700V Drain Source Voltage, 8.5A Continuous Drain Current - IPD70R600P7SAUMA1

This MOSFET is a high-voltage, N‑channel switching transistor designed for surface‑mount power applications. It operates in enhancement mode and is intended for circuits requiring elevated drain-source voltage capability while providing moderate conduction performance and thermal handling for compact SMD layouts.

Features and Benefits:

• 700V drain-source rating enables high‑voltage switching duties
• 8.5A continuous drain current supports sustained load conduction
• 600mΩ Rds(on) limits conduction losses in medium‑power designs
• 10.5W maximum power dissipation permits reliable thermal margin
• 10.5nC typical gate charge gives faster gate transitions
• ±20V gate tolerance allows standard gate‑drive voltages

Applications

• Suitable for high‑voltage switch‑mode power supplies
• Ideal for primary‑side power conversion stages
• Used with resonant and hard‑switched topologies
• Can be used for industrial lighting ballasts
• Employed in compact SMD power modules

What temperature range can it withstand in operation?

It is specified to operate from -55°C up to 150°C, covering wide thermal environments.

How many electrical connections does it present for PCB layout?

The device has three pins in a TO‑252 surface‑mount package requiring conventional SMD footprint design.

What conduction characteristic determines voltage drop during on‑state?

The on‑state resistance of 600mΩ defines the voltage drop at a given drain current and affects conduction losses.

How does gate drive affect switching performance?

The typical gate charge of 10.5nC at Vgs conditions influences required drive current and switching speed for a given gate‑driver capability.