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STMicroelectronics STD11N60M6 Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252 STD11N60M6

RS 제품 번호:: 212-2105
제조사 부품 번호:: STD11N60M6
제조업체:: STMicroelectronics

STMicroelectronics STD11N60M6 Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252 STD11N60M6

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩18,367.60

재고있음

950 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 620	₩1,836.76	₩18,367.60
630 - 1240	₩1,791.64	₩17,916.40
1250 +	₩1,763.44	₩17,634.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 212-2105
제조사 부품 번호:: STD11N60M6
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	600V
	Series	STD11N60M6
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	90W
	Forward Voltage Vf	1.6V
	Typical Gate Charge Qg @ Vgs	10.3nC
	Maximum Operating Temperature	150°C
	Length	6.6mm
	Height	2.4mm
	Width	6.2 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 600V
	Series STD11N60M6
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 90W
	Forward Voltage Vf 1.6V
	Typical Gate Charge Qg @ Vgs 10.3nC
	Maximum Operating Temperature 150°C
	Length 6.6mm
	Height 2.4mm
	Width 6.2 mm
	Standards/Approvals No
	Automotive Standard No

DataSheet - STD11N60M6

MDMesh M6 MOSFET N-CH

The STMicroelectronics MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. It builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses

Lower RDS(on) per area vs previous generation

Low gate input resistance

100% avalanche tested

Zener-protected

STMicroelectronics STD11N60M6 Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252 STD11N60M6

MDMesh M6 MOSFET N-CH

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