STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N
- RS 제품 번호:
- 151-952
- 제조사 부품 번호:
- STD13NM60N
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tape of 5 units)*
₩30,300.00
단종되는 중
- 최종적인 2,245 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 5 - 45 | ₩6,060.00 | ₩30,300.00 |
| 50 - 95 | ₩5,764.00 | ₩28,820.00 |
| 100 - 495 | ₩5,336.00 | ₩26,680.00 |
| 500 - 995 | ₩4,916.00 | ₩24,580.00 |
| 1000 + | ₩4,724.00 | ₩23,620.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-952
- 제조사 부품 번호:
- STD13NM60N
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh II | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.36Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh II | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.36Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Length 10.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
관련된 링크들
- STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin TO-252 STD7NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics MDmesh Type N-Channel MDmesh II Power MOSFET, 17 A, 500 V Enhancement, 3-Pin TO-263 STB23NM50N
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 13 A, 550 V Enhancement, 3-Pin TO-252 STD18N55M5
- STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin TO-252 STD6N95K5
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 11 A, 710 V Enhancement, 3-Pin TO-252 STD15N65M5
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-252 STD16N65M5