STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N
- RS 제품 번호:
- 151-952
- 제조사 부품 번호:
- STD13NM60N
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tape of 5 units)*
₩21,040.50
마지막 RS 재고
- 최종적인 2,250 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 5 - 45 | ₩4,208.10 | ₩21,040.50 |
| 50 - 95 | ₩4,001.40 | ₩20,007.00 |
| 100 - 495 | ₩3,705.00 | ₩18,525.00 |
| 500 - 995 | ₩3,412.50 | ₩17,062.50 |
| 1000 + | ₩3,279.90 | ₩16,399.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-952
- 제조사 부품 번호:
- STD13NM60N
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | MDmesh II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.36Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series MDmesh II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.36Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 2.4mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
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