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STMicroelectronics Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252 STD9N60M6

RS 제품 번호:: 225-0672
제조사 부품 번호:: STD9N60M6
제조업체:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252 STD9N60M6

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩14,513.60

재고있음

2,490 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 10	₩1,451.36	₩14,513.60
20 - 90	₩1,415.64	₩14,156.40
100 - 240	₩1,379.92	₩13,799.20
250 - 490	₩1,346.08	₩13,460.80
500 +	₩1,306.60	₩13,066.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 225-0672
제조사 부품 번호:: STD9N60M6
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	750mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	76W
	Typical Gate Charge Qg @ Vgs	10nC
	Forward Voltage Vf	1.6V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 750mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 76W
	Typical Gate Charge Qg @ Vgs 10nC
	Forward Voltage Vf 1.6V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - STMicroelectronics_STD9N60M6.pdf

The STMicroelectronics new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses

Lower RDS(on) per area vs previous generation

Low gate input resistance

100% avalanche tested

Zener-protected

STMicroelectronics Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252 STD9N60M6

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