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STMicroelectronics Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13N60DM2

RS 제품 번호:: 188-8407
제조사 부품 번호:: STD13N60DM2
제조업체:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13N60DM2

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Subtotal (1 pack of 5 units)*

₩15,716.80

재고있음

2,480 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 620	₩3,143.36	₩15,716.80
625 - 1245	₩3,064.40	₩15,322.00
1250 +	₩3,019.28	₩15,096.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 188-8407
제조사 부품 번호:: STD13N60DM2
제조업체:: STMicroelectronics

참조 문서

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	110W
	Typical Gate Charge Qg @ Vgs	12.5nC
	Forward Voltage Vf	1.6V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	2.17mm
	Length	6.6mm
	Width	6.2 mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 110W
	Typical Gate Charge Qg @ Vgs 12.5nC
	Forward Voltage Vf 1.6V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 2.17mm
	Length 6.6mm
	Width 6.2 mm
	Automotive Standard No

Datasheet STD13N60DM2

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

Extremely high dv/dt ruggedness

Zener-protected

Applications

Switching applications

STMicroelectronics Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13N60DM2

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