제조사부품번호

STMicroelectronics Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-252 STD11N60DM2

RS 제품 번호:: 188-8550
제조사 부품 번호:: STD11N60DM2
제조업체:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-252 STD11N60DM2

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩13,366.80

재고있음

2,175 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 620	₩2,673.36	₩13,366.80
625 - 1245	₩2,605.68	₩13,028.40
1250 +	₩2,568.08	₩12,840.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 188-8550
제조사 부품 번호:: STD11N60DM2
제조업체:: STMicroelectronics

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	420mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	16.5nC
	Maximum Power Dissipation Pd	110W
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	1.6V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	6.2 mm
	Length	6.6mm
	Height	2.17mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 420mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 16.5nC
	Maximum Power Dissipation Pd 110W
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf 1.6V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 6.2 mm
	Length 6.6mm
	Height 2.17mm
	Standards/Approvals No
	Automotive Standard No

Datasheet STD11N60DM2

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

Extremely high dv/dt ruggedness

Zener-protected

Applications

Switching applications

STMicroelectronics Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-252 STD11N60DM2

관련된 링크들