onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263
- RS Stock No.:
- 202-5730
- Mfr. Part No.:
- NVBG040N120SC1
- Brand:
- onsemi
Image representative of range
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS Stock No.:
- 202-5730
- Mfr. Part No.:
- NVBG040N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Series | NVB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 178W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 10.2mm | |
| Width | 4.7 mm | |
| Height | 15.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Series NVB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 178W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Length 10.2mm | ||
Width 4.7 mm | ||
Height 15.7mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
Related links
- onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NVBG040N120SC1
- onsemi NTB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NTBG040N120SC1
- onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F
- onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 NVB150N65S3F
- onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-263 NVB082N65S3F
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin TO-263
