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onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F

RS 제품 번호:: 195-2667
제조사 부품 번호:: NVB190N65S3F
제조업체:: onsemi

onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩45,872.00

재고있음

270 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 190	₩4,587.20	₩45,872.00
200 - 390	₩4,472.52	₩44,725.20
400 +	₩4,404.84	₩44,048.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 195-2667
제조사 부품 번호:: NVB190N65S3F
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	162W
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Height	4.58mm
	Width	9.65 mm
	Length	10.67mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 162W
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Height 4.58mm
	Width 9.65 mm
	Length 10.67mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVB190N65S3F

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

701 V @ TJ = 150°C

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 34 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 314 pF)

Lower switching loss

PPAP Capable

Typ. RDS(on) = 158 mΩ

Application

HV DC/DC converter

onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F

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