onsemi NTB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

공급 부족
글로벌 공급 부족으로 인해 언제 재입고될지 모릅니다.
RS 제품 번호:
202-5689
제조사 부품 번호:
NTBG040N120SC1
제조업체:
onsemi
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-263

Series

NTB

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

357W

Typical Gate Charge Qg @ Vgs

106nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.7V

Maximum Operating Temperature

175°C

Length

10.2mm

Height

15.7mm

Width

4.7 mm

Standards/Approvals

RoHS

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.

40mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

관련된 링크들