제조사부품번호

onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 NVB150N65S3F

RS 재고 번호:: 195-2518
제조 부품 번호:: NVB150N65S3F
제조업체:: onsemi

onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 NVB150N65S3F

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩45,514.80

마지막 RS 재고

최종적인 550 개 unit(s)이 배송 준비 됨

단위당	한팩당	한팩당*
10 - 190	₩4,551.48	₩45,514.80
200 - 390	₩4,436.80	₩44,368.00
400 +	₩4,371.00	₩43,710.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 재고 번호:: 195-2518
제조 부품 번호:: NVB150N65S3F
제조업체:: onsemi

기술적 참조

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	43nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	192W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Length	10.67mm
	Width	9.65 mm
	Height	4.58mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 43nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 192W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Length 10.67mm
	Width 9.65 mm
	Height 4.58mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVB150N65S3F

SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

701 V @ TJ = 150°C

Typ. RDS(on) = 114 m

Ultra Low Gate Charge (Typ. Qg = 43 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 385 pF)

These Devices are Pb−Free

Applications

Automotive On Board Charger

Automotive DC/DC Converter for HEV

onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 NVB150N65S3F

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