제조사부품번호

Wolfspeed C3M Type N-Channel MOSFET, 11 A, 900 V Enhancement, 7-Pin TO-263 C3M0280090J

RS 제품 번호:: 192-3382
제조사 부품 번호:: C3M0280090J
제조업체:: Wolfspeed

Wolfspeed C3M Type N-Channel MOSFET, 11 A, 900 V Enhancement, 7-Pin TO-263 C3M0280090J

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대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩408,148.00

재고있음

2,700 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 50	₩8,162.96	₩408,110.40
100 - 150	₩7,916.68	₩395,871.60
200 +	₩7,679.80	₩383,990.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 192-3382
제조사 부품 번호:: C3M0280090J
제조업체:: Wolfspeed

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Wolfspeed
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	900V
	Series	C3M
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	18 V
	Maximum Power Dissipation Pd	50W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	10nC
	Forward Voltage Vf	4.8V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.23mm
	Height	4.57mm
	Width	9.12 mm
	Automotive Standard	No

	모두 선택
	브랜드 Wolfspeed
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 900V
	Series C3M
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 18 V
	Maximum Power Dissipation Pd 50W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 10nC
	Forward Voltage Vf 4.8V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.23mm
	Height 4.57mm
	Width 9.12 mm
	Automotive Standard No

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

New low-impedance package with driver source

High-speed switching with low capacitances

High blocking voltage with low RDS(on)

Avalanche ruggedness

Fast intrinsic diode with low reverse recovery (Qrr)

Easy to parallel and simple to drive

Wolfspeed C3M Type N-Channel MOSFET, 11 A, 900 V Enhancement, 7-Pin TO-263 C3M0280090J

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