Wolfspeed C3M Type N-Channel MOSFET, 22 A, 1 kV Enhancement, 8-Pin TO-263 C3M0120100J

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩26,978.00

Add to Basket
수량 선택 또는 입력
재고있음
  • 656 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
1 - 12₩26,978.00
13 - 24₩26,301.20
25 +₩25,906.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
150-3965
제조사 부품 번호:
C3M0120100J
제조업체:
Wolfspeed
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Wolfspeed

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

1kV

Series

C3M

Package Type

TO-263

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

9 V

Forward Voltage Vf

4.8V

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

21.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.32mm

Width

9.12 mm

Length

10.23mm

Automotive Standard

No

Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses.

Minimum of 1kV Vbr across entire operating temperature range

low source inductance package with separate driver source pin

High-speed switching with low output capacitance

High blocking voltage with low RDS(on)

Fast intrinsic diode with low reverse recovery (Qrr)

Easy to parallel and simple to drive

관련된 링크들