제조사부품번호

Wolfspeed C3M Type N-Channel MOSFET, 35 A, 900 V Enhancement, 7-Pin TO-263-7 C3M0065090J

RS 제품 번호:: 915-8830
제조사 부품 번호:: C3M0065090J
제조업체:: Wolfspeed

Wolfspeed C3M Type N-Channel MOSFET, 35 A, 900 V Enhancement, 7-Pin TO-263-7 C3M0065090J

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Subtotal (1 unit)*

₩24,797.20

마지막 RS 재고

최종적인 24 개 unit(s)이 배송 준비 됨

수량	한팩당
1 - 12	₩24,797.20
13 - 24	₩24,195.60
25 +	₩23,725.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 915-8830
제조사 부품 번호:: C3M0065090J
제조업체:: Wolfspeed

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모두 선택	제품 정보	값
	브랜드	Wolfspeed
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	900V
	Series	C3M
	Package Type	TO-263-7
	Mount Type	Through Hole
	Pin Count	7
	Maximum Drain Source Resistance Rds	78mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	4.4V
	Maximum Gate Source Voltage Vgs	19 V
	Maximum Power Dissipation Pd	113W
	Typical Gate Charge Qg @ Vgs	30nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS, Halogen Free
	Automotive Standard	No

	모두 선택
	브랜드 Wolfspeed
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 900V
	Series C3M
	Package Type TO-263-7
	Mount Type Through Hole
	Pin Count 7
	Maximum Drain Source Resistance Rds 78mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 4.4V
	Maximum Gate Source Voltage Vgs 19 V
	Maximum Power Dissipation Pd 113W
	Typical Gate Charge Qg @ Vgs 30nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS, Halogen Free
	Automotive Standard No

COO (Country of Origin):: CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

Wolfspeed C3M Type N-Channel MOSFET, 35 A, 900 V Enhancement, 7-Pin TO-263-7 C3M0065090J

Wolfspeed Silicon Carbide Power MOSFETs

MOSFET Transistors, Wolfspeed

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