제조사부품번호

Wolfspeed C3M Type N-Channel MOSFET, 11.5 A, 900 V Enhancement, 3-Pin TO-247 C3M0280090D

RS 제품 번호:: 915-8842
제조사 부품 번호:: C3M0280090D
제조업체:: Wolfspeed

Wolfspeed C3M Type N-Channel MOSFET, 11.5 A, 900 V Enhancement, 3-Pin TO-247 C3M0280090D

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩16,807.20

재고있음

30 개 단위 배송 준비 완료
추가로 2026년 1월 08일 부터 686 개 단위 배송

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수량	한팩당	한팩당*
2 - 6	₩8,403.60	₩16,807.20
8 - 14	₩8,262.60	₩16,525.20
16 +	₩8,102.80	₩16,205.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 915-8842
제조사 부품 번호:: C3M0280090D
제조업체:: Wolfspeed

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Wolfspeed
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11.5A
	Maximum Drain Source Voltage Vds	900V
	Package Type	TO-247
	Series	C3M
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	54W
	Forward Voltage Vf	4.4V
	Typical Gate Charge Qg @ Vgs	9.5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	18 V
	Maximum Operating Temperature	150°C
	Length	16.13mm
	Standards/Approvals	No
	Height	5.21mm
	Width	21.1 mm
	Automotive Standard	No

	모두 선택
	브랜드 Wolfspeed
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11.5A
	Maximum Drain Source Voltage Vds 900V
	Package Type TO-247
	Series C3M
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 54W
	Forward Voltage Vf 4.4V
	Typical Gate Charge Qg @ Vgs 9.5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 18 V
	Maximum Operating Temperature 150°C
	Length 16.13mm
	Standards/Approvals No
	Height 5.21mm
	Width 21.1 mm
	Automotive Standard No

COO (Country of Origin):: CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

Wolfspeed C3M Type N-Channel MOSFET, 11.5 A, 900 V Enhancement, 3-Pin TO-247 C3M0280090D

Wolfspeed Silicon Carbide Power MOSFETs

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