제조사부품번호

onsemi SuperFET III MOSFET Easy-drive Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-263 NVB072N65S3

RS 제품 번호:: 186-1461
제조사 부품 번호:: NVB072N65S3
제조업체:: onsemi

onsemi SuperFET III MOSFET Easy-drive Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-263 NVB072N65S3

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩20,285.20

마지막 RS 재고

최종적인 770 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
2 - 198	₩10,142.60	₩20,285.20
200 - 398	₩9,888.80	₩19,777.60
400 +	₩9,738.40	₩19,476.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 186-1461
제조사 부품 번호:: NVB072N65S3
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	SuperFET III MOSFET Easy-drive
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	107mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	312W
	Typical Gate Charge Qg @ Vgs	82nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.67mm
	Width	9.65 mm
	Height	4.58mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series SuperFET III MOSFET Easy-drive
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 107mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 312W
	Typical Gate Charge Qg @ Vgs 82nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.67mm
	Width 9.65 mm
	Height 4.58mm
	Automotive Standard AEC-Q101

Datasheet NVB072N65S3

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

700 V @ TJ = 150°C

Ultra Low Gate Charge (Typ. Qg = 78 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)

PPAP Capable

Typ. RDS(on) = 63 mΩ

Higher system reliability at low temperature operation

Lower switching loss

PPAP Capable

Applications

HV DC/DC converter

End Products

On Board Charger

DC/DC Converter

onsemi SuperFET III MOSFET Easy-drive Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-263 NVB072N65S3

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