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onsemi Type N-Channel MOSFET, 44 A, 1200 V Enhancement, 3-Pin TO-247 NVHL080N120SC1

RS 제품 번호:: 189-0419
제조사 부품 번호:: NVHL080N120SC1
제조업체:: onsemi

onsemi Type N-Channel MOSFET, 44 A, 1200 V Enhancement, 3-Pin TO-247 NVHL080N120SC1

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Subtotal (1 unit)*

₩17,860.00

일시적 품절

2026년 2월 27일 부터 배송

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RS 제품 번호:: 189-0419
제조사 부품 번호:: NVHL080N120SC1
제조업체:: onsemi

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	162mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	56nC
	Maximum Power Dissipation Pd	348W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	4V
	Maximum Operating Temperature	175°C
	Length	15.87mm
	Width	4.82 mm
	Height	20.82mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 162mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 56nC
	Maximum Power Dissipation Pd 348W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf 4V
	Maximum Operating Temperature 175°C
	Length 15.87mm
	Width 4.82 mm
	Height 20.82mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVHL080N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

1200V rated

Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A

High Speed Switching and Low Capacitance

Devices are Pb-Free

Applications

PFC

OBC

End Products

Automotive DC/DC converter for EV/PHEV

Automotive On Board Charger

Automotive Auxiliary Motor Drive

onsemi Type N-Channel MOSFET, 44 A, 1200 V Enhancement, 3-Pin TO-247 NVHL080N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3

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