Vishay Single 1 N-Channel Power MOSFET, 16 A, 500 V TO-220AB IRFB17N50LPBF
- RS 제품 번호:
- 180-8312
- 제조사 부품 번호:
- IRFB17N50LPBF
- 제조업체:
- Vishay
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- RS 제품 번호:
- 180-8312
- 제조사 부품 번호:
- IRFB17N50LPBF
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 0.32Ω | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Power Dissipation Pd | 220W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 0.32Ω | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Power Dissipation Pd 220W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFB17N50L is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 30V. It is having TO-220AB package. It offers drain to source resistance (RDS.) 0.28ohms at 10VGS. Maximum drain current 16A.
Low gate charge Qg results in simple drive Requirement
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
Low trr and soft diode recovery
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