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Vishay Single 1 N-Channel Power MOSFET, 16 A, 500 V TO-220AB IRFB17N50LPBF

RS 제품 번호:: 180-8312
제조사 부품 번호:: IRFB17N50LPBF
제조업체:: Vishay

Vishay Single 1 N-Channel Power MOSFET, 16 A, 500 V TO-220AB IRFB17N50LPBF

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RS는 이 제품을 더 이상 판매하지 않습니다.

RS 제품 번호:: 180-8312
제조사 부품 번호:: IRFB17N50LPBF
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Mount Type	Screw
	Maximum Drain Source Resistance Rds	0.32Ω
	Typical Gate Charge Qg @ Vgs	130nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	220W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Standards/Approvals	RoHS 2002/95/EC
	Number of Elements per Chip	1
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Mount Type Screw
	Maximum Drain Source Resistance Rds 0.32Ω
	Typical Gate Charge Qg @ Vgs 130nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 220W
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Standards/Approvals RoHS 2002/95/EC
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

The Vishay IRFB17N50L is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 30V. It is having TO-220AB package. It offers drain to source resistance (RDS.) 0.28ohms at 10VGS. Maximum drain current 16A.

Low gate charge Qg results in simple drive Requirement

Improved gate, avalanche, and dynamic dV/dt ruggedness

Fully characterized capacitance and avalanche voltage and current

Low trr and soft diode recovery

Vishay Single 1 N-Channel Power MOSFET, 16 A, 500 V TO-220AB IRFB17N50LPBF

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