Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220AB IRFB4110GPBF

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Subtotal (1 tube of 2 units)*

₩13,667.60

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  • 2026년 1월 02일 부터 최종 196 개 단위 배송
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Per Tube*
2 - 12₩6,833.80₩13,667.60
14 - 24₩6,664.60₩13,329.20
26 +₩6,561.20₩13,122.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
865-5807
제조사 부품 번호:
IRFB4110GPBF
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220AB

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

370W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

150nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Width

4.83 mm

Height

16.51mm

Automotive Standard

No

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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