Infineon Single HEXFET 1 N-Channel MOSFET, 35 A, 150 V Enhancement, 3-Pin TO-220AB IRFB4615PBF

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RS 제품 번호:
688-6967
제조사 부품 번호:
IRFB4615PBF
제조업체:
Infineon
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브랜드

Infineon

Transistor Configuration

Single

Series

HEXFET

Number of Elements per Chip

1

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

35 A

Maximum Drain Source Voltage (Vds)

150 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-220AB

Height

9.02 mm

Length

10.67 mm

Maximum Drain Source Resistance (Rds)

39 mΩ

Maximum Gate Source Voltage (Vgs)

20 V, -20 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

144 W

Minimum Operating Temperature

-55 °C

Mount Type

Through Hole

Width

4.83 mm

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Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

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A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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