Vishay Single 1 Type N-Channel Power MOSFET, 5 A, 500 V, 3-Pin IRF830ALPBF
- RS 제품 번호:
- 180-8307
- 제조사 부품 번호:
- IRF830ALPBF
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩115,996.00
재고있음
- 450 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩2,319.92 | ₩115,996.00 |
| 100 - 150 | ₩2,269.16 | ₩113,476.80 |
| 200 + | ₩2,218.40 | ₩110,938.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-8307
- 제조사 부품 번호:
- IRF830ALPBF
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Width | 10.67 mm | |
| Height | 4.83mm | |
| Length | 9.65mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Width 10.67 mm | ||
Height 4.83mm | ||
Length 9.65mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 1.4mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 74W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fully characterized capacitance and avalanche voltage and current
• Halogen free
• Improved gate, avalanche and dynamic dV/dt
• Lead (Pb) free component
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
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