Vishay Single 1 Type N-Channel Power MOSFET, 5 A, 500 V, 3-Pin TO-262 IRF830ALPBF

RS 제품 번호:: 180-8307
제조사 부품 번호:: IRF830ALPBF
제조업체:: Vishay

Vishay Single 1 Type N-Channel Power MOSFET, 5 A, 500 V, 3-Pin TO-262 IRF830ALPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 tube of 50 units)*

₩129,500.00

일시적 품절

350 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 50	₩2,590.00	₩129,460.00
100 - 150	₩2,532.00	₩126,640.00
200 +	₩2,476.00	₩123,820.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 180-8307
제조사 부품 번호:: IRF830ALPBF
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-262
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4Ω
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Power Dissipation Pd	74W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.5V
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Length	9.65mm
	Height	4.83mm
	Standards/Approvals	RoHS 2002/95/EC, IEC 61249-2-21
	Width	10.67mm
	Number of Elements per Chip	1
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-262
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4Ω
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Power Dissipation Pd 74W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.5V
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Length 9.65mm
	Height 4.83mm
	Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21
	Width 10.67mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay Power MOSFET, 500V Drain‑Source Voltage, 5A Continuous Drain Current - IRF830ALPBF

This power MOSFET is a single N-channel transistor designed for high-voltage switching and power-conversion duties in electronic systems. Packaged in a TO-262 format, it serves as a compact switching element for circuits requiring elevated drain-to-source voltage capability and moderate continuous current handling in industrial and commercial contexts.

Features and Benefits:

• 500V drain-to-source rating enables high-voltage applications
• 5A continuous drain current supports steady power delivery
• 1.4Ω Rds(on) reduces conduction losses in low-current designs
• 24nC total gate charge allows faster gate transitions
• ±30V gate tolerance permits robust gate-drive margins
• 74W power dissipation capacity aids thermal headroom at load

Applications

• Suitable for offline switch-mode power supplies
• Ideal for high-voltage motor-drive front-ends
• Used with pulse converters requiring fast switching
• Can be used for industrial lamp and heater control
• Appropriate for power conditioning and auxiliary supplies

What thermal extremes can the device withstand in operation?

It is specified to operate across a range from -55°C to 150°C, accommodating low-temperature starts and elevated junction temperatures under load.

How many discrete transistor elements are present on the chip?

The semiconductor contains a single element per chip, providing a solitary switching channel for circuit designs.

Which environmental and material standards are reflected in its manufacture?

The component conforms to RoHS 2002/95/EC and IEC 61249-2-21 material and substance standards.

What is the typical forward voltage in diode conduction events?

The intrinsic body diode exhibits a forward voltage around 1.5V during conduction.