Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB IRF830APBF

RS 제품 번호:: 178-0834
제조사 부품 번호:: IRF830APBF
제조업체:: Vishay

Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB IRF830APBF

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Subtotal (1 tube of 50 units)*

₩112,500.00

일시적 품절

600 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
50 - 50	₩2,250.00	₩112,480.00
100 - 150	₩2,200.00	₩110,040.00
200 +	₩2,152.00	₩107,600.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-0834
제조사 부품 번호:: IRF830APBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Series	IRF830A
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	24nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	74W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.5V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	4.7mm
	Height	9.01mm
	Length	10.41mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Series IRF830A
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 24nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 74W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.5V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 4.7mm
	Height 9.01mm
	Length 10.41mm
	Automotive Standard No

Datasheet

Vishay IRF830A Series Power MOSFET, 500V Drain Source Voltage, 5A Continuous Drain Current - IRF830APBF

This power MOSFET is a high-voltage N-channel enhancement transistor designed for switching and power-conversion tasks in industrial and commercial electronics. It operates across a wide temperature range for demanding environments and is supplied in a through-hole TO-220AB package for straightforward mounting and thermal management.

Features and Benefits:

• 500V drain rating enables high-voltage switching applications
• 1.4Ω maximum Rds reduces conduction losses under load
• 5A continuous drain current supports moderate current designs
• 74W maximum power dissipation allows substantial heat handling
• 24nC typical gate charge yields predictable switching performance
• 30V gate tolerance permits robust gate-drive margins

Applications

• Suitable for high-voltage supply switching in inverters
• Ideal for industrial motor-drive switching stages
• Used with discrete power supplies in laboratory equipment
• Can be used for resistive and inductive load switching
• Appropriate for through-hole prototyping and repair projects

What thermal performance considerations should be made when using it?

Thermal management must account for the 74W dissipation rating

a suitable heatsink and correct mounting in the TO-220AB orientation will maintain junction temperatures within safe limits.

How does the gate drive affect switching behaviour?

With a typical gate charge of 24nC and a maximum Vgs of 30V, gate-drive circuitry should be sized to provide sufficient current for desired rise and fall times while keeping gate voltage below the specified limit.

What environmental limits define its operating range?

The device is rated to function from -55°C up to 150°C, so system design should ensure ambient and thermal-resistance values keep junction temperature inside that span.

Is it suitable for automotive-grade designs?

It is not classified as automotive grade

designers should consider automotive-specific alternatives when vehicle-level qualifications are required.