Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB

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포장 옵션
RS 제품 번호:
542-9434
Distrelec 제품 번호:
171-16-197
제조사 부품 번호:
IRF830APBF
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

500V

Series

IRF830A

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

74W

Maximum Operating Temperature

150°C

Length

10.41mm

Width

4.7mm

Standards/Approvals

RoHS

Height

9.01mm

Automotive Standard

No

Vishay IRF830A Series Power MOSFET, 500V Maximum Drain Source Voltage, 5A Maximum Continuous Drain Current - IRF830APBF


This power MOSFET is a through-hole N-channel enhancement device designed for high-voltage switching in industrial electronics. It is intended for applications where robust drain-to-source voltage handling and moderate current capacity are required, providing a Compact solution for power switching on heatsinked assemblies.

Features and Benefits:


• 500V Vds enables high-voltage switching in industrial circuits • 5A continuous drain current supports steady load operation • 1.4Ω Rds(on) minimises conduction losses under load • 74W maximum power dissipation for effective thermal handling • 24nC typical gate charge allows predictable switching behaviour • Vgs ±30V rating protects gate under control-signal excursions

Applications


• Suitable for high-voltage motor drive front-ends • Ideal for switch-mode power supplies in industrial equipment • Used for power conversion modules requiring through-hole mounting • Can be used for relay-replacement switching in control panels

What mounting method is required for reliable heat removal?


The device is supplied in a TO-220AB package for through-hole installation and benefits from a heatsink attached to the tab to achieve rated power dissipation.

How does the gate charge affect switching performance?


A typical gate charge of 24nC at rated conditions determines required driver strength and influences switching losses and rise/fall times in high-speed applications.

What temperature range can it operate within?


The component is rated to function from -55°C up to 150°C, allowing use across harsh industrial thermal environments.

What protection should be considered for gate and drain overstress?


Designers should include gate protection to remain within ±30V and implement snubbing or clamp networks to limit transients on the drain at high voltages.

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