제조사부품번호

Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-263 IRF830ASPBF

RS 제품 번호:: 650-4110
제조사 부품 번호:: IRF830ASPBF
제조업체:: Vishay

Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-263 IRF830ASPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

Subtotal (1 pack of 5 units)*

₩16,807.20

마지막 RS 재고

최종적인 890 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
5 +	₩3,361.44	₩16,807.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 650-4110
제조사 부품 번호:: IRF830ASPBF
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Series	IRF830A
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	74W
	Typical Gate Charge Qg @ Vgs	24nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	10.67mm
	Standards/Approvals	IEC 61249-2-21, RoHS 2002/95/EC
	Width	9.65 mm
	Height	4.83mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Series IRF830A
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 74W
	Typical Gate Charge Qg @ Vgs 24nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 10.67mm
	Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC
	Width 9.65 mm
	Height 4.83mm
	Automotive Standard No

Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-263 IRF830ASPBF

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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