제조사부품번호

Vishay Single Type N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ALPBF

RS 제품 번호:: 180-8304
제조사 부품 번호:: IRF740ALPBF
제조업체:: Vishay

Vishay Single Type N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ALPBF

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Subtotal (1 tube of 50 units)*

₩159,500.00

150 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
50 - 50	₩3,190.00	₩159,480.00
100 - 150	₩3,120.00	₩156,020.00
200 +	₩3,050.00	₩152,500.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 180-8304
제조사 부품 번호:: IRF740ALPBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-263
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.55Ω
	Maximum Power Dissipation Pd	125W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Standards/Approvals	IEC 61249-2-21, RoHS 2002/95/EC
	Width	10.67mm
	Length	9.65mm
	Height	4.83mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-263
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.55Ω
	Maximum Power Dissipation Pd 125W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC
	Width 10.67mm
	Length 9.65mm
	Height 4.83mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740ALPBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion roles in industrial electronics. It operates in demanding thermal environments and suits designs requiring a three-terminal device with robust voltage handling and moderate current capability.

Features and Benefits:

• 400V drain rating for high-voltage switching applications
• 10A continuous drain current to support sustained loads
• 0.55Ω Rds(on) for controlled conduction losses
• 125W power dissipation enabling significant thermal throughput
• 36nC typical gate charge reducing drive energy requirements
• 30V maximum gate-source voltage for standard gate-drive compatibility

Applications

• Suitable for offline SMPS primary switching stages
• Ideal for power-factor-correction circuits in supplies
• Used with motor-control front-ends for low-speed drives
• Can be used for industrial lighting ballast switching
• Useful in high-voltage test and measurement equipment

What thermal range can it withstand during operation?

It is rated to operate from -55°C up to 150°C, allowing use across wide ambient and elevated junction conditions.

Which packaging form factor does it use for PCB mounting?

It is supplied in a TO-263 package, providing a flat power tab and three terminals for surface-mount assembly.

Are there environmental or materials standards associated with it?

The device complies with RoHS 2002/95/EC and follows IEC 61249-2-21 material specifications.

What gate-drive considerations arise from its gate charge?

With a typical Qg of 36nC at Vgs, gate drivers must supply sufficient transient current to achieve the required switching speed without excessive delay.