Vishay Single Type N-Channel Power MOSFET, 10 A, 400 V IRF740ALPBF
- RS 제품 번호:
- 180-8304
- 제조사 부품 번호:
- IRF740ALPBF
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩109,416.00
재고있음
- 150 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩2,188.32 | ₩109,397.20 |
| 100 - 150 | ₩2,139.44 | ₩107,009.60 |
| 200 + | ₩2,092.44 | ₩104,622.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-8304
- 제조사 부품 번호:
- IRF740ALPBF
- 제조업체:
- Vishay
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Maximum Drain Source Resistance Rds | 0.55Ω | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.67 mm | |
| Height | 4.83mm | |
| Length | 9.65mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Maximum Drain Source Resistance Rds 0.55Ω | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 10.67 mm | ||
Height 4.83mm | ||
Length 9.65mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRF740AL is a N-channel power MOSFET having drain to source(Vds) voltage of 400V.The gate to source voltage(VGS) is 30V. It is having D2PAK (TO-263)and I2PAK (TO-262) package. It offers drain to source resistance (RDS.) 0.55ohms at 10VGS. Maximum drain current 10A.
Low gate charge Qg results in simple drive requirement
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
관련된 링크들
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