Vishay IRF740S Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-263 IRF740SPBF

RS 제품 번호:: 542-9406
Distrelec 제품 번호:: 171-15-868
제조사 부품 번호:: IRF740SPBF
제조업체:: Vishay

Vishay IRF740S Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-263 IRF740SPBF

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₩3,256.50

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RS 제품 번호:: 542-9406
Distrelec 제품 번호:: 171-15-868
제조사 부품 번호:: IRF740SPBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Series	IRF740S
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	2V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	9.65mm
	Height	4.83mm
	Length	10.67mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Series IRF740S
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 2V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 9.65mm
	Height 4.83mm
	Length 10.67mm
	Automotive Standard No

Vishay IRF740S Series Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740SPBF

This power MOSFET is a high-voltage, N-channel enhancement device designed for surface-mount applications in industrial electronic systems. It functions as a switching transistor capable of handling substantial voltage and current in demanding environments, suitable for use where compact, board-mounted power switching is required.

Features and Benefits:

• 400V drain rating enables high-voltage switching applications • 10A continuous current supports moderate power loads • 125W power dissipation allows sustained thermal handling • 550mΩ Rds(on) reduces conduction losses in low-to-mid power circuits • 63nC typical gate charge yields predictable drive requirements • 150°C maximum operating temperature suits high-temperature environments

Applications

• Suitable for industrial motor drive switching stages • Ideal for high-voltage power converters and inverters • Used for auxiliary power supplies in automation equipment • Can be used for solid-state relay and switch modules • Used with surface-mount assemblies requiring TO-263 mounting

What mounting style does it require on a PCB?

It is supplied in a TO-263 surface-mount package with three pins designed for board-level soldering and thermal conduction to a PCB copper area.

What gate voltage limits must designers observe?

Gate-to-source voltage must not exceed 20V to avoid gate oxide stress and potential device failure.

How should thermal management be approached in designs?

Designers should use adequate copper area or heatsinking on the PCB to dissipate up to 125W under specified conditions and maintain junction temperatures below the 150°C limit.

What environmental temperature range can it tolerate during operation?

The device is rated to operate down to -55°C and up to 150°C, permitting use across a wide range of ambient temperatures.

What characteristic affects switching drive sizing?

The typical gate charge of 63nC determines the drive current and transition times required from the gate driver to achieve the desired switching speed.