Vishay TrenchFET Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23 SI2307CDS-T1-GE3
- RS 제품 번호:
- 180-7738
- 제조사 부품 번호:
- SI2307CDS-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 25 units)*
₩16,544.00
재고있음
- 50 개 단위 배송 준비 완료
- 추가로 2026년 1월 26일 부터 2,500 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 725 | ₩661.76 | ₩16,525.20 |
| 750 - 1475 | ₩644.84 | ₩16,111.60 |
| 1500 + | ₩635.44 | ₩15,867.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-7738
- 제조사 부품 번호:
- SI2307CDS-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 138mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.14W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.64 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 138mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.14W | ||
Maximum Operating Temperature 150°C | ||
Width 2.64 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 88mohm at a gate-source voltage of 10V. It has continuous drain current of 3.5A and a maximum power rating of 1.8W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
관련된 링크들
- Vishay TrenchFET Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 SI2303CDS-T1-GE3
- Vishay Si2301CDS Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
- Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- Vishay Si2305CDS Type P-Channel MOSFET, 4.4 A, 8 V Enhancement, 3-Pin SOT-23 SI2305CDS-T1-GE3
- Vishay Si2343CDS Type P-Channel MOSFET, 5.9 A, 30 V Enhancement, 3-Pin SOT-23 SI2343CDS-T1-GE3
- Vishay Si2319CDS Type P-Channel MOSFET, 4.4 A, 40 V Enhancement, 3-Pin SOT-23 SI2319CDS-T1-GE3
- Vishay Si2318CDS Type N-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318CDS-T1-GE3