Vishay TrenchFET Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23
- RS 제품 번호:
- 180-7270
- 제조사 부품 번호:
- SI2307CDS-T1-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩716,280.00
일시적 품절
- 2026년 8월 17일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩238.76 | ₩717,972.00 |
| 15000 + | ₩235.00 | ₩703,872.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-7270
- 제조사 부품 번호:
- SI2307CDS-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 138mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.14W | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Length | 3.04mm | |
| Width | 2.64 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 138mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.14W | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Length 3.04mm | ||
Width 2.64 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 88mohm at a gate-source voltage of 10V. It has continuous drain current of 3.5A and a maximum power rating of 1.8W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
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