Vishay TrenchFET Gen IV N-Channel MOSFET, 108 A, 45 V Enhancement, 8-Pin PowerPAK 1212 SISS50DN-T1-GE3

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RS 제품 번호:
200-6846
제조사 부품 번호:
SISS50DN-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

108A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET Gen IV

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

70nC

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Height

3.3mm

Length

3.3mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SISS50DN-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS(on) in a compact and thermally enhanced package

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

100 % Rg and UIS tested

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