Vishay Siliconix Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
공급 부족
글로벌 공급 부족으로 인해 언제 재입고될지 모릅니다.
RS 제품 번호:
178-3720
제조사 부품 번호:
SQJ504EP-T1_GE3
제조업체:
Vishay Siliconix
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay Siliconix

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

34W

Typical Gate Charge Qg @ Vgs

12.1nC

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Width

5 mm

Height

1.07mm

Length

5.99mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

제외

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount dual channel (both N and P-channels) MOSFET is a new age product with a drain-source voltage of 40V. It has drain-source resistance of 17mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 34W and a continuous drain current of 30A. The MOSFET has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in the automotive industry.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

관련된 링크들