Vishay Dual SQJ264EP 2 N-Channel MOSFET, 54 A, 60 V Enhancement, 6-Pin SO-8 SQJ264EP-T1_GE3
- RS 제품 번호:
- 204-7237
- 제조사 부품 번호:
- SQJ264EP-T1_GE3
- 제조업체:
- Vishay
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 204-7237
- 제조사 부품 번호:
- SQJ264EP-T1_GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQJ264EP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Forward Voltage Vf | 0.82V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 4.9mm | |
| Height | 1.07mm | |
| Width | 4.37mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQJ264EP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Forward Voltage Vf 0.82V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 4.9mm | ||
Height 1.07mm | ||
Width 4.37mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs is optimized for synchronous buck applications. It is AEC-Q101 qualified.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
관련된 링크들
- Vishay Dual SQJ264EP 2 Type N-Channel MOSFET, 54 A, 60 V Enhancement, 6-Pin SO-8 SQJ264EP-T1_GE3
- Vishay SQJ138EP Type N-Channel MOSFET, 330 A, 40 V Enhancement, 4-Pin SO-8 SQJ138EP-T1_GE3
- Vishay SQJ140EP Type N-Channel MOSFET, 266 A, 40 V Enhancement, 4-Pin SO-8 SQJ140EP-T1_GE3
- Vishay SQJ150EP Type N-Channel MOSFET, 66 A, 40 V Enhancement, 4-Pin SO-8 SQJ150EP-T1_GE3
- Vishay SQJ146EP Type N-Channel MOSFET, 75 A, 40 V Enhancement, 4-Pin SO-8 SQJ146EP-T1_GE3
- Vishay SQJ142EP Type N-Channel MOSFET, 167 A, 40 V Enhancement, 4-Pin SO-8 SQJ142EP-T1_GE3
- Vishay SQJ144EP Type N-Channel MOSFET, 130 A, 40 V Enhancement, 4-Pin SO-8 SQJ144EP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3