Vishay IRF620 Type N-Channel Power MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-220AB IRF620PBF

RS 제품 번호:: 178-0854
제조사 부품 번호:: IRF620PBF
제조업체:: Vishay

Vishay IRF620 Type N-Channel Power MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-220AB IRF620PBF

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Subtotal (1 tube of 50 units)*

₩72,900.00

900 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
50 - 200	₩1,458.00	₩72,940.00
250 +	₩1,416.00	₩70,760.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-0854
제조사 부품 번호:: IRF620PBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	5.2A
	Maximum Drain Source Voltage Vds	200V
	Series	IRF620
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.8Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	14nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	50W
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Standards/Approvals	RoHS 2002/95/EC
	Length	10.41mm
	Height	9.01mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 5.2A
	Maximum Drain Source Voltage Vds 200V
	Series IRF620
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.8Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 14nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 50W
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Standards/Approvals RoHS 2002/95/EC
	Length 10.41mm
	Height 9.01mm
	Automotive Standard No

Vishay IRF620 Series Power MOSFET, 200V Drain Source Voltage, 50W Power Dissipation - IRF620PBF

This power MOSFET is a high-voltage N-channel transistor intended for through-hole power electronics. It operates across a wide temperature span and is suited to switching and amplification tasks where a robust drain-source voltage capability is required. The component is presented in a conventional through-hole package to facilitate mounting in mixed-technology assemblies.

Features and Benefits:

• 200V drain-source rating enables high-voltage switching applications
• 0.8Ω on-resistance reduces conduction losses in low-current circuits
• 5.2A continuous drain current supports moderate power loads
• 50W power dissipation capacity allows sustained thermal stress handling
• 14nC typical gate charge promotes efficient gate driving at Vgs20V
• N-channel enhancement mode simplifies use in common switching topologies

Applications

• Suitable for power supplies handling high-voltage rails
• Ideal for motor control in small industrial drives
• Used with audio amplifiers requiring high-voltage transistors
• Can be used for DC-DC converters in bench equipment
• Appropriate for hobbyist and prototype through-hole assemblies

What gate voltage should be applied for reliable switching?

The device accepts up to 20V between gate and source

use appropriate gate-drive voltages below this maximum to switch effectively.

How does thermal performance affect mounting choices?

With 50W maximum dissipation, a heatsink or adequate PCB copper area is recommended to maintain junction temperatures within safe limits during continuous operation.

What are the expected switching characteristics?

The typical gate charge of 14nC at the specified gate drive indicates moderate gate-drive energy requirements and influences switching speed and driver selection.

What environmental extremes can it tolerate?

It is specified for operation from -55°C up to 150°C, permitting use in a wide range of ambient and elevated-temperature environments.