Infineon HEXFETPower MOSFET N-Channel MOSFET, 353 A, 24 V Enhancement, 3-Pin TO-220AB IRF1324PBF

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Subtotal (1 pack of 2 units)*

₩10,340.00

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한팩당*
2 - 12₩5,170.00₩10,340.00
14 - 24₩5,040.00₩10,080.00
26 +₩4,950.00₩9,900.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
688-6807
제조사 부품 번호:
IRF1324PBF
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

353A

Maximum Drain Source Voltage Vds

24V

Series

HEXFETPower MOSFET

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

160nC

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Operating Temperature

175°C

Width

4.83mm

Length

10.67mm

Standards/Approvals

No

Height

9.02mm

Automotive Standard

No

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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