Vishay IRF510 Type N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB IRF510PBF

RS 제품 번호:: 708-5134
Distrelec 제품 번호:: 304-44-152
제조사 부품 번호:: IRF510PBF
제조업체:: Vishay

Vishay IRF510 Type N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB IRF510PBF

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Subtotal (1 pack of 10 units)*

₩7,507.50

추가로 2026년 6월 29일 부터 1,260 개 단위 배송
추가로 2026년 7월 06일 부터 3,130 개 단위 배송

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수량	한팩당	한팩당*
10 - 10	₩750.75	₩7,507.50
20 - 20	₩739.05	₩7,390.50
30 +	₩723.45	₩7,234.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 708-5134
Distrelec 제품 번호:: 304-44-152
제조사 부품 번호:: IRF510PBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	5.6A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220AB
	Series	IRF510
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	540mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	43W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	8.3nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	2.5V
	Maximum Operating Temperature	175°C
	Height	9.01mm
	Length	10.41mm
	Width	4.7mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 5.6A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220AB
	Series IRF510
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 540mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 43W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 8.3nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 2.5V
	Maximum Operating Temperature 175°C
	Height 9.01mm
	Length 10.41mm
	Width 4.7mm
	Standards/Approvals RoHS
	Automotive Standard No

COO (Country of Origin):: CN

Vishay IRF510 Series Power MOSFET, 100V Maximum Drain Source Voltage, 5.6A Maximum Continuous Drain Current - IRF510PBF

This power MOSFET is a through‑hole N‑channel enhancement device designed for switching and amplification tasks in industrial and electronic systems. It operates across a wide temperature range and is intended for applications requiring moderate current handling and high voltage blocking capability in a TO‑220AB package.

Features and Benefits:

• 100V drain‑source rating for high‑voltage switching capability • 5.6A continuous drain current for moderate load handling • 540mΩ Rds(on) to limit conduction losses under load • 43W power dissipation to support thermal headroom in assemblies • 20V gate‑source limit allowing flexible drive voltages • 8.3nC typical gate charge enabling predictable switching profiles

Applications

• Suitable for motor driver stages in automation equipment • Ideal for power switching in laboratory power supplies • Used for load switching in test and measurement rigs • Can be used for analogue amplifier outputs in control systems

What operating temperatures can it tolerate in harsh environments?

It functions from -55°C up to 175°C, allowing use in demanding temperature conditions.

How is the device mounted for mechanical and thermal stability?

It uses a through‑hole mount in a TO‑220AB package, permitting secure PCB fastening and straightforward heatsinking.

What gate drive considerations affect switching performance?

The typical gate charge of 8.3nC at rated Vgs influences driver current requirements and switching speed trade‑offs.

What should be considered when pairing with a heatsink?

With 43W maximum dissipation, heatsink thermal resistance and airflow must be sized to keep junction temperature within limits.