제조사부품번호

onsemi FCH067N65S3 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 172-3423
제조사 부품 번호:: FCH067N65S3-F155
제조업체:: onsemi

onsemi FCH067N65S3 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 450 units)*

₩2,725,812.00

일시적 품절

2026년 5월 04일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
450 - 450	₩6,057.36	₩2,725,981.20
900 - 1350	₩5,937.04	₩2,671,498.80
1800 +	₩5,818.60	₩2,618,031.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 172-3423
제조사 부품 번호:: FCH067N65S3-F155
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	FCH067N65S3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	78nC
	Maximum Power Dissipation Pd	312W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	20.82mm
	Length	15.87mm
	Standards/Approvals	No
	Width	4.82 mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series FCH067N65S3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 78nC
	Maximum Power Dissipation Pd 312W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 20.82mm
	Length 15.87mm
	Standards/Approvals No
	Width 4.82 mm
	Automotive Standard No

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 78 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 62 mΩ

Wave soldering guarantee

Computing

Telecomunication

Industrial

Telecom / Server

Solar inverter / UPS

onsemi FCH067N65S3 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-247

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